Datasheet 搜索 > IGBT晶体管 > Infineon（英飞凌） > IGW40N65F5AXKSA1 数据手册 > IGW40N65F5AXKSA1 数据手册 4/14 页
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IGW40N65F5AXKSA1 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
IGBT晶体管
封装:
TO-247-3
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IGW40N65F5AXKSA1数据手册
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4
IGW40N65F5A
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2014-12-15
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Collector-emittervoltage,T
vj
≥25°C V
CE
650 V
DCcollectorcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
I
C
74.0
46.0
A
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax
1)
I
Cpuls
120.0 A
Turn off safe operating area
V
CE
≤650V,T
vj
≤175°C,t
p
=1µs
1)
- 120.0 A
Gate-emitter voltage
TransientGate-emittervoltage(t
p
≤10µs,D<0.010)
V
GE
±20
±30
V
PowerdissipationT
C
=25°C
PowerdissipationT
C
=100°C
P
tot
250.0
125.0
W
Operating junction temperature T
vj
-40...+175 °C
Storage temperature T
stg
-55...+150 °C
Soldering temperature,
2)
wave soldering 1.6mm (0.063in.) from case for 10s 260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M 0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
junction - case
R
th(j-c)
0.60 K/W
Thermal resistance
junction - ambient
R
th(j-a)
40 K/W
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V
(BR)CES
V
GE
=0V,I
C
=0.20mA 650 - - V
Collector-emitter saturation voltage V
CEsat
V
GE
=15.0V,I
C
=40.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
-
-
-
1.60
1.80
1.90
2.10
-
-
V
Gate-emitter threshold voltage V
GE(th)
I
C
=0.40mA,V
CE
=V
GE
3.2 4.0 4.8 V
Zero gate voltage collector current I
CES
V
CE
=650V,V
GE
=0V
T
vj
=25°C
T
vj
=175°C
-
-
-
1000.0
40.0
-
µA
Gate-emitter leakage current I
GES
V
CE
=0V,V
GE
=20V - - 100 nA
Transconductance g
fs
V
CE
=20V,I
C
=40.0A - 50.0 - S
1)
Defined by design. Not subject to production test.
2)
Package not recommended for surface mount applications
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