Datasheet 搜索 > IGBT晶体管 > Infineon（英飞凌） > IGW40N65F5AXKSA1 数据手册 > IGW40N65F5AXKSA1 数据手册 5/14 页
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IGW40N65F5AXKSA1 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
IGBT晶体管
封装:
TO-247-3
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IGW40N65F5AXKSA1数据手册
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5
IGW40N65F5A
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2014-12-15
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance C
ies
- 2500 -
Output capacitance C
oes
- 50 -
Reverse transfer capacitance C
res
- 9 -
V
CE
=25V,V
GE
=0V,f=1MHz pF
Gate charge Q
G
V
CC
=520V,I
C
=40.0A,
V
GE
=15V
- 95.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
L
E
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atT
vj
=25°C
Turn-on delay time t
d(on)
- 19 - ns
Rise time t
r
- 11 - ns
Turn-off delay time t
d(off)
- 165 - ns
Fall time t
f
- 13 - ns
Turn-on energy E
on
- 0.35 - mJ
Turn-off energy E
off
- 0.10 - mJ
Total switching energy E
ts
- 0.45 - mJ
T
vj
=25°C,
V
CC
=400V,I
C
=20.0A,
V
GE
=0.0/15.0V,
R
G(on)
=15.0Ω,R
G(off)
=15.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-on delay time t
d(on)
- 18 - ns
Rise time t
r
- 4 - ns
Turn-off delay time t
d(off)
- 175 - ns
Fall time t
f
- 12 - ns
Turn-on energy E
on
- 0.07 - mJ
Turn-off energy E
off
- 0.03 - mJ
Total switching energy E
ts
- 0.10 - mJ
T
vj
=25°C,
V
CC
=400V,I
C
=5.0A,
V
GE
=0.0/15.0V,
R
G(on)
=15.0Ω,R
G(off)
=15.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
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