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INA333SJD
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INA333-HT
www.ti.com
SBOS514C MARCH 2010REVISED OCTOBER 2013
Micro-Power, Zerø-Drift, Rail-to-Rail Out
Instrumentation Amplifier
Check for Samples: INA333-HT
1
FEATURES
SUPPORTS EXTREME TEMPERATURE
APPLICATIONS
2
Low Offset Voltage: 25 μV (max at 25°C),
G 100 Controlled Baseline
Low Drift: 0.2 μV/°C, G 1000 One Assembly/Test Site
Low Noise: 55 nV/Hz, G 100 One Fabrication Site
High CMRR: 100 dB (min at 25°C), G 10 Available in Extreme (–55°C/210°C)
Temperature Range
(1)
Supply Range: +1.8 V to +5.5 V
Extended Product Life Cycle
Input Voltage: (V–) +0.1 V to (V+) –0.1 V
Extended Product-Change Notification
Output Range: (V–) +0.05 V to (V+) –0.05V
Product Traceability
Low Quiescent Current: 198 μA
Texas Instruments' high temperature products
RFI Filtered Inputs
utilize highly optimized silicon (die) solutions
with design and process enhancements to
APPLICATIONS
maximize performance over extended
Down-Hole Drilling
temperatures.
High Temperature Environments
(1) Custom temperature ranges available
DESCRIPTION
The INA333 is a low-power, precision instrumentation amplifier offering excellent accuracy. The versatile 3-op
amp design, small size, and low power make it ideal for a wide range of portable applications.
A single external resistor sets any gain from 1 to 1000. The INA333 is designed to use an industry-standard gain
equation: G = 1 + (100k/R
G
).
The INA333 provides very low offset voltage (25 μV at 25°C, G 100), excellent offset voltage drift (0.2 μV/°C,
G 100), and high common-mode rejection (100 dB at 25°C, G 10). It operates with power supplies as low as
1.8 V (±0.9V), and quiescent current is only 50 μA—ideal for battery-operated systems. Using autocalibration
techniques to ensure excellent precision over the extended industrial temperature range, the INA333 also offers
exceptionally low noise density (55 nV/Hz) that extends down to dc.
The INA333 is is specified over the T
A
= –55°C to +210°C temperature range.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2010–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

INA333SJD 数据手册

TI(德州仪器)
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TI(德州仪器)
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INA333 数据手册

TI(德州仪器)
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