Datasheet 搜索 > MOS管 > Infineon（英飞凌） > IPD50P04P413ATMA1 数据手册 > IPD50P04P413ATMA1 数据手册 1/9 页
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IPD50P04P413ATMA1 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
TO-252-3
描述:
INFINEON IPD50P04P413ATMA1 晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0092 ohm, -10 V, -3 V
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电气规格在P2
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IPD50P04P413ATMA1数据手册
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Type
IPD50P04P4-13
OptiMOS
®
-P2 Power-Transistor
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
1)
I
D
T
C
=25°C,
V
GS
=-10V
-50 A
T
C
=100°C,
V
GS
=-10V
2)
-45
Pulsed drain current
2)
I
D,pulse
T
C
=25°C
-200
Avalanche energy, single pulse
2)
E
AS
I
D
=-25A
18 mJ
Avalanche current, single pulse
I
AS
-
-50 A
Gate source voltage
V
GS
- ±20 V
Power dissipation
P
tot
T
C
=25 °C
58 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
-40 V
R
DS(on)
12.6
mW
I
D
-50 A
Product Summary
PG-TO252-3-313
Type Package Marking
IPD50P04P4-13 PG-TO252-3-313 4P0413
Rev. 1.2
page 1 2013-12-09
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