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IRF1407PBF 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
TO-220-3
描述:
INFINEON IRF1407PBF 晶体管, MOSFET, N沟道, 130 A, 75 V, 7.8 mohm, 10 V, 4 V
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IRF1407PBF数据手册
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Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 130
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 92 A
I
DM
Pulsed Drain Current 520
P
D
@T
C
= 25°C Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 390 mJ
I
AR
Avalanche Current See Fig.12a, 12b, 15, 16 A
E
AR
Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 4.6 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
HEXFET
®
Power MOSFET
This Stripe Planar design of HEXFET
®
Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
S
D
G
Absolute Maximum Ratings
V
DSS
= 75V
R
DS(on)
= 0.0078Ω
I
D
= 130A
Description
07/14/10
www.irf.com 1
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
Benefits
TO-220AB
IRF1407PbF
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.45
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
PD - 95485A
Typical Applications
l
Industrial Motor Drive
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