Datasheet 搜索 > MOS管 > Infineon（英飞凌） > IRF1407STRRPBF 数据手册 > IRF1407STRRPBF 数据手册 1/13 页
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IRF1407STRRPBF 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
TO-263-3
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IRF1407STRRPBF数据手册
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IRF1407SPbF
IRF1407LPbF
V
DSS
75V
R
DS(on)
0.0078
I
D
100A
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF1407L) is available for low-profile
applications.
1 2016-5-26
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 100
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 70
I
DM
Pulsed Drain Current 520
P
D
@T
A
= 25°C Maximum Power Dissipation 3.8 W
P
D
@T
C
= 25°C Maximum Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 390
mJ
I
AR
Avalanche Current See Fig.15,16, 12a, 12b A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Peak Diode Recovery dv/dt 4.6 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.75
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) ––– 40
D2 Pak
IRF1407SPbF
G D S
Gate Drain Source
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
S
D
G
S
D
G
D
TO-262 Pak
IRF1407LPbF
Base part number Package Type
Standard Pack
Form Quantity
IRF1407LPbF
TO-262 Tube 50
IRF1407LPbF (Obsolete)
IRF1407SPbF D2-Pak Tape and Reel Left 800 IRF1407STRLPbF
Orderable Part Number
HEXFET
®
Power MOSFET
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