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IRF2804SPBF 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
TO-263-3
描述:
INFINEON IRF2804SPBF 晶体管, MOSFET, N沟道, 75 A, 40 V, 2 mohm, 10 V, 4 V
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P9P10P11
标记信息在P9P10P11
技术参数、封装参数在P1
导航目录
IRF2804SPBF数据手册
Page:
of 12 Go
若手册格式错乱，请下载阅览PDF原文件
IRF2804PbF
IRF2804SPbF
IRF2804LPbF
HEXFET
®
Power MOSFET
V
DSS
= 40V
R
DS(on)
= 2.0mΩ
I
D
= 75A
05/12/10
www.irf.com 1
HEXFET
®
is a registered trademark of International Rectifier.
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of other
applications.
S
D
G
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
D
2
Pak
IRF2804SPbF
TO-220AB
IRF2804PbF
TO-262
IRF2804LPbF
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
E
AS
(tested)
Sin
g
le Pulse Avalanche Ener
gy
Tested Value
i
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Ener
gy
h
mJ
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case –––
0.50
l
°C/W
R
θCS
Case-to-Sink, Flat, Greased Surface
0.50 –––
R
θJA
Junction-to-Ambient ––– 62
R
θJA
Junction-to-Ambient (PCB Mount, steady state)
j
––– 40
Max.
270
190
1080
75
10 lbf•in (1.1N•m)
300
2.0
± 20
540
1160
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
PD - 95332B
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