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IRF3808STRRPBF 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
TO-252-3
描述:
场效应管(MOSFET) IRF3808STRRPBF D2PAK
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IRF3808STRRPBF数据手册
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HEXFET
®
Power MOSFET
This Advanced Planar Stripe HEXFET ® Power MOSFET
utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, low RθJC, fast switching
speed and improved repetitive avalanche rating. This
combination makes the design an extremely efficient and
reliable choice for use in a wide variety of applications.
S
D
G
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 106
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 75 A
I
DM
Pulsed Drain Current 550
P
D
@T
C
= 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 430 mJ
I
AR
Avalanche Current 82 A
E
AR
Repetitive Avalanche Energy See Fig.12a, 12b, 15, 16 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.75 °C/W
R
θJA
Junction-to-Ambient (PCB Mounted, Steady State) ––– 40
Thermal Resistance
V
DSS
= 75V
R
DS(on)
= 0.007Ω
I
D
= 106A
Description
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free
Benefits
Typical Applications
l
Industrial Motor Drive
D
2
Pak
IRF3808SPbF
TO-262
IRF3808LPbF
IRF3808SPbF
IRF3808LPbF
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 01, 2013
Base Part Number
Form Quantity
IRF3808LPbF TO-262 Tube 50 IRF3808LPbF
Tube 50 IRF3808SPbF
Tape and Reel Left 800 IRF3808STRLPbF
Tape and Reel Right 800 IRF3808STRRPbF
IRF3808SPbF
D
2
Pak
Package Type
Standard Pack
Orderable Part Number
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