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器件3D模型￥ 7.329
IRF6201TRPBF 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
SOIC-8
描述:
HEXFET® N 通道功率 MOSFET 最大 50A，InfineonHEXFET® 电源 MOSFET 具有各种坚固的单 N 通道设备，用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。 ### MOSFET 晶体管，Infineon (IR)Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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IRF6201TRPBF数据手册
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DirectFET Power MOSFET
Typical values (unless otherwise specified)
DirectFET ISOMETRIC
L8
Applicable DirectFET Outline and Substrate Outline
l RoHS Compliant, Halogen Free
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
l Industrial Qualified
Description
The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has a footprint smaller than a D
2
PAK and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems.
The IRF7769L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the
device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance power converters.
Fig 1. Typical On-Resistance vs. Gate Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.09mH, R
G
= 25Ω, I
AS
= 74A.
Notes:
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
V
GS
, Gate-to-Source Voltage (V)
0.00
2.00
4.00
6.00
8.00
10.00
12.00
T
y
p
i
c
a
l
R
D
S
(
o
n
)
,
(
m
Ω
)
T
J
= 25°C
T
J
= 125°C
I
D
= 74A
Fig 2. Typical On-Resistance vs. Drain Current
20 40 60 80 100
I
D
, Drain Current (A)
2.80
2.90
3.00
3.10
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
T
A
= 25°C
V
GS
= 8.0V
V
GS
= 7.0V
V
GS
= 10V
V
GS
= 15V
V
DSS
V
GS
R
DS(on)
100V min ±20V max
2.8mΩ@ 10V
Q
g tot
Q
gd
V
gs(th)
200nC 110nC 2.7V
SB SC M2 M4 L4 L6 L8
D
S
G
D
S
S
S
S S
S
S
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
f
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
f
A
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
e
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Packa ge Limited)
f
I
DM
Pulsed Drain Current
g
E
AS
Single Pulse Avalanche Energy
h
mJ
I
AR
Avalanche Current
g
A74
375
260
Max.
88
20
500
±20
100
124
IRF7769L1TRPbF
1 www.irf.com © 2012 International Rectifier February 18, 2013
Note
Form Quantity
IRF7769L1TRPbF DirectFET Large Can Tape and Reel 4000 "TR" suffix
Part number Package Type Standard Pack
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