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IRF640 数据手册 - Vishay Semiconductor（威世）
制造商:
Vishay Semiconductor（威世）
分类:
MOS管
封装:
TO-220-3
描述:
功率MOSFET Power MOSFET
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技术参数、封装参数在P1P2P8
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IRF640数据手册
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of 9 Go
若手册格式错乱，请下载阅览PDF原文件
IRF640, SiHF640
www.vishay.com
Vishay Siliconix
S15-2667-Rev. C, 16-Nov-15
1
Document Number: 91036
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 2.7 mH, R
g
= 25 , I
AS
= 18 A (see fig. 12).
c. I
SD
18 A, dI/dt 150 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 200
R
DS(on)
()V
GS
= 10 V 0.18
Q
g
(Max.) (nC) 70
Q
gs
(nC) 13
Q
gd
(nC) 39
Configuration Single
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
Available
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
IRF640PbF
SiHF640-E3
SnPb
IRF640
SiHF640
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
200
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
18
AT
C
= 100 °C 11
Pulsed Drain Current
a
I
DM
72
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
b
E
AS
580 mJ
Repetitive Avalanche Current
a
I
AR
18 A
Repetitive Avalanche Energy
a
E
AR
13 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
125 W
Peak Diode Recovery dV/dt
c
dV/dt 5.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak temperature)
d
for 10 s 300
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
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