Datasheet 搜索 > MOS管 > International Rectifier（国际整流器） > IRF7303TRPBF 数据手册 > IRF7303TRPBF 数据手册 1/9 页
器件3D模型￥ 2.091
IRF7303TRPBF 数据手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
SOIC-8
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IRF7303TRPBF数据手册
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HEXFET
®
Power MOSFET
PD - 95177
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
IRF7303PbF
SO-8
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Parameter Max. Units
I
D
@ T
A
= 25°C 10 Sec. Pulsed Drain Current, V
GS
@ 10V 5.3
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 4.9
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 3.9
I
DM
Pulsed Drain Current 20
P
D
@T
A
= 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
A
V
DSS
= 30V
R
DS(on)
= 0.050Ω
10/6/04
Thermal Resistance Ratings
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient 62.5
°C/W
l Lead-Free
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