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IRF7343QTRPBF 数据手册 - International Rectifier（国际整流器）
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International Rectifier（国际整流器）
分类:
MOS管
封装:
SO-8
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IRF7343QTRPBF数据手册
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N-Ch P-Ch
V
DSS
55V -55V
R
DS(on)
0.050Ω 0.105Ω
HEXFET
®
Power MOSFET
07/23/07
IRF7343QPBF
Description
D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Max.
N-Channel P-Channel Units
V
DS
Drain-Source Voltage 55 -55 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 4.7 -3.4
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 3.8 -2.7
I
DM
Pulsed Drain Current 38 -27
P
D
@T
A
= 25°C Maximum Power Dissipation 2.0 W
P
D
@T
A
= 70°C Maximum Power Dissipation 1.3 W
E
AS
Single Pulse Avalanche Energy 72 114 mJ
I
AR
Avalanche Current 4.7 -3.4 A
E
AR
Repetitive Avalanche Energy 0.20 mJ
V
GS
Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Parameter
A
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient 62.5 °C/W
Thermal Resistance
www.irf.com 1
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Automotive [Q101] Qualified
l Lead-Free
Specifically designed for Automotive applications, these
HEXFET
®
Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
SO-8
PD - 96110
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