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器件3D模型￥ 3.358
IRF7403PBF 数据手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
SOIC-8
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IRF7403PBF数据手册
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HEXFET
®
Power MOSFET
PD - 95301
9/30/04
l
Generation V Technology
l Ultra Low On-Resistance
l N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
IRF7403PbF
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
SO-8
V
DSS
= 30V
R
DS(on)
= 0.022Ω
Parameter Max. Units
I
D
@ T
A
= 25°C 10 Sec. Pulsed Drain Current, V
GS
@ 10V 9.7
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 8.5
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 5.4
I
DM
Pulsed Drain Current 34
P
D
@T
A
= 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
V
GS
Gate-to-Source Voltage ±20 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
A
Thermal Resistance Ratings
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient 50
°C/W
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