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IRFR5305TRLPBF 数据手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
TO-252-3
描述:
INTERNATIONAL RECTIFIER IRFR5305TRLPBF 场效应管, MOSFET
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P8P9
标记信息在P8P9
技术参数、封装参数在P1
电气规格在P2
导航目录
IRFR5305TRLPBF数据手册
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IRFR/U5305
HEXFET
®
Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET
®
Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V -31
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ -10V -22 A
I
DM
Pulsed Drain Current -110
P
D
@T
C
= 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 280 mJ
I
AR
Avalanche Current -16 A
E
AR
Repetitive Avalanche Energy 11 m J
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.4
R
θJA
Junction-to-Ambient (PCB mount)* ––– 50 °C/W
R
θJA
Junction-to-Ambient** ––– 110
Thermal Resistance
V
DSS
= -55V
R
DS(on)
= 0.065Ω
I
D
= -31A
l Ultra Low On-Resistance
l Surface Mount (IRFR5305)
l Straight Lead (IRFU5305)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Description
10/23/00
S
D
G
D-Pak I-Pak
IRFR5305 IRFU5305
PD - 91402A
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