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IRLZ44 数据手册 - Vishay Siliconix
制造商:
Vishay Siliconix
分类:
MOS管
封装:
TO-220-3
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IRLZ44数据手册
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若手册格式错乱，请下载阅览PDF原文件
Document Number: 91328 www.vishay.com
S11-0520-Rev. C, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRLZ44, SiHLZ44
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Logic-Level Gate Drive
•R
DS(on)
Specified at V
GS
= 4 V and 5 V
• 175 °C
Operating Temperature
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 179 μH, R
g
= 25 Ω, I
AS
= 51 A (see fig. 12).
c. I
SD
≤ 51 A, dV/dt ≤ 250 A/s, V
DD
≤ V
DS
, T
J
≤ 175 °C.
d. 1.6 mm from case.
e. Current limited by the package, (die current = 51 A).
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
(Ω)V
GS
= 5.0 V 0.028
Q
g
(Max.) (nC) 66
Q
gs
(nC) 12
Q
gd
(nC) 43
Configuration Single
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
IRLZ44PbF
SiHLZ44-E3
SnPb
IRLZ44
SiHLZ44
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 10
Continuous Drain Current
e
V
GS
at 5.0 V
T
C
= 25 °C
I
D
50
A
Continuous Drain Current
T
C
= 100 °C 36
Pulsed Drain Current
a
I
DM
200
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
b
E
AS
400 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
150 W
Peak Diode Recovery dV/dt
c
dV/dt 4.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)
d
for 10 s 300
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
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