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IRLZ44 数据手册 - Vishay Siliconix
制造商:
Vishay Siliconix
分类:
MOS管
封装:
TO-220-3
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IRLZ44数据手册
Page:
of 9 Go
若手册格式错乱，请下载阅览PDF原文件
www.vishay.com Document Number: 91328
2 S11-0520-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRLZ44, SiHLZ44
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. Current limited by the package, (die current = 51 A).
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.50 -
Maximum Junction-to-Case (Drain) R
thJC
-1.0
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 60 - -
V
V
DS
Temperature Coefficient ΔV
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.070 -
V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.0 - 2.0 V
Gate-Source Leakage I
GSS
V
GS
= 10 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 60 V, V
GS
= 0 V - - 25
μA
V
DS
= 48 V, V
GS
= 0 V, T
J
= 150 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 5.0 V I
D
= 31 A
b
--0.028
Ω
V
GS
= 4.0 V I
D
= 25 A
b
--0.039
Forward Transconductance g
fs
V
DS
= 25 V, I
D
= 31 A
b
23 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 3300 -
pFOutput Capacitance C
oss
- 1200 -
Reverse Transfer Capacitance C
rss
- 200 -
Total Gate Charge Q
g
V
GS
= 5.0 V
I
D
= 51 A, V
DS
= 48 V,
see fig. 6 and 13
b
--66
nC Gate-Source Charge Q
gs
--12
Gate-Drain Charge Q
gd
--43
Turn-On Delay Time t
d(on)
V
DD
= 30 V, I
D
= 51 A,
R
g
= 4.6 Ω, R
D
= 0.56 Ω, see fig. 10
b
-17-
ns
Rise Time t
r
- 230 -
Turn-Off Delay Time t
d(off)
-42-
Fall Time t
f
- 110 -
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--50
c
A
Pulsed Diode Forward Current
a
I
SM
- - 200
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 51 A, V
GS
= 0 V
b
--2.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 51 A, dI/dt = 100 A/μs
b
- 130 180 ns
Body Diode Reverse Recovery Charge Q
rr
-0.841.3μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
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