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IXFH32N50Q 数据手册 - IXYS Semiconductor
制造商:
IXYS Semiconductor
分类:
MOS管
封装:
TO-247-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
IXFH32N50Q数据手册
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© 2004 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 500 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 500 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C 32 A
I
DM
T
C
= 25°C; pulse width limited by T
JM
128 A
I
AR
T
C
= 25°C 32 A
E
AR
T
C
= 25°C 45 mJ
E
AS
1500 mJ
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
, 5 V/ns
T
J
≤ 150°C, R
G
= 2 Ω
P
D
T
C
= 25°C 416 W
T
J
-55 ... + 150 °C
T
JM
150 °C
T
stg
-55 ... + 150 °C
T
L
1.6 mm (0.063 in) from case for 10 s 300 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Features
z
IXYS advanced low Q
g
process
z
Low gate charge and capacitances
- easier to drive
- faster switching
z
International standard packages
z
Low R
DS (on)
z
Unclamped Inductive Switching (UIS)
rated
z
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z
Easy to mount
z
Space savings
z
High power density
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 250 uA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA 2.5 4.5 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= V
DSS
T
J
= 25°C 100 µA
V
GS
= 0 V T
J
= 125°C1mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
0.16 Ω
Note 1
DS98596E(02/04)
TO-247 AD (IXFH)
G = Gate D = Drain
S = Source TAB = Drain
HiPerFET
TM
Power MOSFETs
Q-Class
TO-268 (D3) ( IXFT)
G
S
V
DSS
I
D25
R
DS(on)
500 V 32 A 0.16
ΩΩ
ΩΩ
Ω
500 V 32 A 0.16
ΩΩ
ΩΩ
Ω
t
rr
≤ ≤
≤ ≤
≤ 250 ns
IXFH 32N50Q
IXFT 32N50Q
(TAB)
(TAB)
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