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JANTX2N2222AUB 数据手册 - Microchip（微芯）
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JANTX2N2222AUB数据手册
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
T4-LDS-0060 Rev. 2 (100247) Page 1 of 6
DEVICES LEVELS
2N2221A 2N2222A JAN
2N2221AL 2N2222AL JANTX
2N2221AUA 2N2222AUA JANTXV
2N2221AUB 2N2222AUB JANS
2N2221AUBC * 2N2222AUBC *
* Available to JANS quality level only.
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage V
CEO
50 Vdc
Collector-Base Voltage V
CBO
75 Vdc
Emitter-Base Voltage V
EBO
6.0 Vdc
Collector Current I
C
800 mAdc
Total Power Dissipation @ T
A
= +25°C P
T
0.5 W
Operating & Storage Junction Temperature Range T
op
, T
stg
-65 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Max. Unit
Thermal Resistance, Junction-to-Ambient
2N2221A, L
2N2221AUA
2N2221AUB, UBC
2N2222A, L
2N2222AUA
2N2222AUB, UBC
R
θJA
325
210
325
°C/W
Note: Consult 19500/255 for thermal performance curves.
1. Derate linearly 3.08mW/°C above T
A
> +37.5°C
2. Derate linearly 4.76mW/°C above T
A
> +63.5°C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
V
(BR)CEO
50
Vdc
Collector-Base Cutoff Current
V
CB
= 75Vdc
V
CB
= 60Vdc
I
CBO
10
10
μAdc
ηAdc
Emitter-Base Cutoff Current
V
EB
= 6.0Vdc
V
EB
= 4.0Vdc
I
EBO
10
10
μAdc
ηAdc
Collector-Emitter Cutoff Current
V
CE
= 50Vdc
I
CES
50
ηAdc
TO-18 (TO-206AA)
2N2221A, 2N2222A
4 PIN
2N2221AUA, 2N2222AUA
3 PIN
2N2221AUB, 2N2222AUB
2N2221AUBC, 2N2222AUBC
(UBC = Ceramic Lid Version)
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