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JANTX2N2222AUB 其他数据使用手册 - Semicoa Semiconductor
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CSOT-23
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JANTX2N2222AUB数据手册
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若手册格式错乱，请下载阅览PDF原文件
www.SEMICOA.com
2N2222AUB
Silicon NPN Transisto
r
Data Sheet
Description
• Screening and processing per MIL-PRF-19500
Appendix E
• JAN level (2N2222AUBJ)
• JANTX level (2N2222AUBJX)
• JANTXV level (2N2222AUBJV)
• JANS level (2N2222AUBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose
• Low power
• NPN silicon transistor
Features
• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 0400
• Reference document:
MIL-PRF-19500/255
Benefits
• Qualification Levels: JAN, JANTX,
• Radiation testing available
Absolute Maximum Ratings
T
C
= 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage V
CEO
50
Volts
Collector-Base Voltage V
CBO
75
Volts
Emitter-Base Voltage V
EBO
6
Volts
Collector Current, Continuous I
C
800
mA
Power Dissipation, T
A
= 25
O
C
Derate above 37.5
O
C
P
T
0.5
3.08
W
mW/°C
Operating Junction Temperature T
J
-65 to +200
°C
Storage Temperature T
STG
-65 to +200
°C
Thermal Resistance
R
θJA
325
°C/W
Copyright 2010
SEMICOA Corporation offers:
• JANSR level (2N2222AUBJSR)
JANTXV, JANS and JANSR
Please contact SEMICOA for special configurations
Rev. N 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 1
SEMICOA Corporation
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