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JANTXV1N5811URS 数据手册 - Microsemi（美高森美）
制造商:
Microsemi（美高森美）
分类:
功率二极管
封装:
SQ-MELF
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JANTXV1N5811URS数据手册
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T4-LDS-0168-1, Rev. 1 (120776) ©2012 Microsemi Corporation Page 1 of 5
1N5807US, 1N5809US, 1N5811US and URS
Available on
commercial
versions
VOID-LESS HERMETICALLY SEALED ULTRAFAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/477
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rectifiers
with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass
construction using an internal “Category 1” metallurgical bond. These devices are available in both
surface mount MELF and leaded package configurations. Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time requirements
including standard, fast and ultrafast device types in both through-hole and surface mount
packages.
“B” MELF
Package (US)
“B” MELF
Package (URS)
Also available in:
“B” Package
(axial-leaded)
1N5807, 09 and 11
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered surface mount equivalent of 1N5807, 1N5809, 1N5811 series.
• Void-less hermetically sealed glass package.
• Quadruple-layer passivation.
• Extremely robust construction.
• Internal “Category 1” metallurgical bonds.
• JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/477.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Ultrafast recovery 6 amp rectifier series from 50 to 150 V.
• Military, space and other high-reliability applications.
• Switching power supplies or other applications requiring extremely fast switching & low forward
loss.
• High forward surge current capability.
• Low thermal resistance.
• Controlled avalanche with peak reverse power capability.
• Inherently radiation hard as described in Microsemi MicroNote 050.
MAXIMUM RATINGS @ T
A
= 25
o
C unless otherwise specified
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
T
J
and T
STG
-65 to +175
o
C
Thermal Resistance Junction-to-End Cap Figure 1
R
ӨJEC
6.5
o
C/W
Thermal Resistance
R
ӨJX
52
o
C/W
Working Peak Reverse Voltage:
1N5807
1N5809
1N5811
V
RWM
50
100
150
V
Forward Surge Current
(3)
I
FSM
125
A
Average Rectified Output Current
@ T
L
= +75
o
C at 3/8 inch lead length
(1)
I
O1
6.0 A
Average Rectified Output-Current
@ T
A
= +55
o
C at 3/8 inch lead length
(2)
I
O2
3.0 A
Capacitance @ V
R
= 10 V, f = 1 MHz; Vsig = 50 mV (p-p)
C
J
60
pF
Reverse Recovery Time
(4)
t
rr
30
ns
Solder Temperature @ 10 s
T
SP
260
o
C
Notes: 1. I
O1
is rated at T
EC
= 75 °C. Derate at 60 mA/ºC for T
EC
above 75 ºC.
2. I
O2
is derated at 25 mA/ºC above T
A
= 55
o
C for PC boards where thermal resistance from mounting
point to ambient is sufficiently controlled where T
J(max)
175
o
C is not exceeded.
3. T
A
= 25
o
C @ I
O
= 3.0 A and V
RWM
for ten 8.3 ms surges at 1 minute intervals.
4. I
F
= 1.0 A, I
RM
= 1.0 A, I
R(REC)
= .0.10 A and di/dt = 100 A/µs min.
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