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LM317MDCYRG3 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
稳压芯片
封装:
TO-261-4
描述:
TEXAS INSTRUMENTS LM317MDCYRG3 芯片, 可调线性稳压器 1.25V 至 37V SOT-223-4, 整卷
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LM317MDCYRG3数据手册
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LM317M
SLVS297P –APRIL 2000–REVISED MARCH 2014
www.ti.com
11 Device and Documentation Support
11.1 Trademarks
All trademarks are the property of their respective owners.
11.2 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
12 Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated
Product Folder Links: LM317M
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