Datasheet 搜索 > 电池管理芯片 > Linear Technology（凌力尔特） > LTC4364IDE-2#PBF 数据手册 > LTC4364IDE-2#PBF 数据手册 6/24 页
器件3D模型￥ 501.431
LTC4364IDE-2#PBF 数据手册 - Linear Technology（凌力尔特）
制造商:
Linear Technology（凌力尔特）
分类:
电池管理芯片
封装:
DFN-14
描述:
LINEAR TECHNOLOGY LTC4364IDE-2#PBF 芯片, 电涌消除器, 4/80V, 自动重试, 14DFN
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3D模型
符号图
焊盘图
引脚图
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页面导航:
引脚图在P7P8Hot
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原理图在P9
封装尺寸在P21
焊盘布局在P22P23
型号编码规则在P3
标记信息在P3
封装信息在P3
技术参数、封装参数在P4
应用领域在P1P7P8P11P12P13P14P15P16P17P18P19
电气规格在P3P4P5P6P12
导航目录
LTC4364IDE-2#PBF数据手册
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of 24 Go
若手册格式错乱，请下载阅览PDF原文件
LTC4364-1/LTC4364-2
6
436412f
TYPICAL PERFORMANCE CHARACTERISTICS
Overcurrent Threshold
vs OUT Voltage
Overvoltage TMR Current
vs V
CC
– V
OUT
Overcurrent TMR Current
vs V
CC
– V
OUT
EN, F LT Output Low vs Current
Retry Duty Cycle vs V
CC
– V
OUT
(LTC4364-2 Only)
HGATE Pull-Down Current
vs Temperature
DGATE Pull-Down Current
vs Temperature
Ideal Diode Regulation Voltage
vs V
CC
Ideal Diode Regulation Voltage
vs Temperature
TEMPERATURE (°C)
–50
I
HGATE(DN)
(mA)
150
175
200
25 75
436412 G10
125
100
–25 0
50 100 125
75
50
∆V
SNS
= 100mV OR FB = 1.5V
∆V
HGATE
= 5V
V
CC
= 12V
TEMPERATURE (°C)
–50
I
DGATE(DN)
(mA)
150
175
200
25 75
436412 G11
125
100
–25 0
50 100 125
75
50
V
SENSE
– V
SOURCE
= 200mV
V
CC
= 12V
∆V
DGATE
= 5V
V
OUT
(V)
0
∆V
SNS
(mV)
40
50
60
1.5 2.5 4.0
436412 G12
30
20
10
0.5 1.0
2.0
3.0 3.5
V
CC
– V
OUT
(V)
0
0
I
TMR(UP)
(µA)
–10
–20
–30
–40
20 40
60
80
436412 G13
–50
–60
10 30
50
70
OVERVOLTAGE CONDITION
OUT = 5V
TMR = 1V
V
CC
– V
OUT
(V)
0
0
I
TMR(UP)
(µA)
–50
–100
–150
–200
20 40
60
80
436412 G14
–250
–300
10 30
50
70
OVERCURRENT CONDITION
OUT = 5V
TMR = 1V
V
CC
– V
OUT
(V)
0
RETRY DUTY CYCLE (%)
0.4
0.6
80
436412 G15
0.2
0
20
40
60
10
30
50
70
0.8
0.3
0.5
0.1
0.7
OVERVOLTAGE CONDITION
OUT = 16V
OVERCURRENT CONDITION
OUT = 0V
CURRENT (mA)
0
0
V
OL
(V)
0.25
0.50
0.75
1.00
1.25
1.50
1 2 3 4
436412 G16
5
V
CC
= 12V
V
CC
(V)
4
∆V
SD
(mV)
30
40
80
436412 G17
20
10
8
12
40
6
10
20
60
50
25
35
15
45
TEMPERATURE (°C)
–50
10
∆V
SD
(mV)
30
60
0
50
75 100
436412 G18
20
50
40
–25
25
125
V
CC
= 4V
V
CC
= 12V
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