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M25P40V-MN3 数据手册 - ST Microelectronics（意法半导体）

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ST Microelectronics（意法半导体）

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典型应用电路图在P2

原理图在P3

型号编码规则在P5

封装信息在P5

技术参数、封装参数在P7

型号编号列表在P1

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典型应用电路图在P2
原理图在P3
型号编码规则在P5
封装信息在P5
技术参数、封装参数在P7
型号编号列表在P1

M25P40V-MN3数据手册

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DATA BRIEF

October 2004

For further information contact your local ST sales office.

M25PXX

512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory

With 40 MHz or 50 MHz SPI Bus Interface

FEATURES SUMMARY

■ 512Kbit to 32Mbit of Flash Memory

■ Page Program (up to 256 Bytes) in 1.4ms

(typical)

■ Sector Erase (256 Kbit or 512Kbit)

■ Bulk Erase (512Kbit to 32Mbit)

■ 2.7 to 3.6V Single Supply Voltage

■ SPI Bus Compatible Serial Interface

■ 40MHz to 50MHz Clock Rate (maximum)

■ Deep Power-down Mode 1µA (typical)

■ Electronic Signatures

– JEDEC Standard Two-Byte Signature

(20xxh)

– RES Instruction, One-Byte, Signature, for

backward compatibility

■ More than 100000 Erase/Program Cycles per

Sector

■ More than 20 Year Data Retention

Table 1. Product List

Figure 1. Packages

Reference Part Number

M25Pxx

M25P32

M25P16

M25P80

M25P40

M25P20

M25P10-A

M25P05-A

VDFPN8 (ME)

8x6mm (MLP8)

SO16 (MF)

300 mil width

SO8 (MN)

150 mil width

VDFPN8 (MP)

(MLP8)

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