Datasheet 搜索 > Flash芯片 > Micron（镁光） > M25P40-VMN3PB 数据手册 > M25P40-VMN3PB 数据手册 1/61 页
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M25P40-VMN3PB 数据手册 - Micron（镁光）
制造商:
Micron（镁光）
分类:
Flash芯片
封装:
SOIC-8
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M25P40-VMN3PB数据手册
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April 2010 Rev 20 1/61
1
Numonyx
®
Forté™ Serial Flash Memory
M25P40
4 Mbit, low voltage, serial Flash memory
with 75 MHz SPI bus interface
Features
4 Mbit of Flash memory
2.3 V to 3.6 V single supply voltage
SPI bus compatible serial interface
75 MHz clock rate (maximum)
Page Program (up to 256 bytes) in 0.8 ms
(typical)
Sector Erase (512 Kbit) in 0.6 s (typical)
Bulk Erase (4 Mbit) in 4.5 s (typical)
Deep Power-down mode 1 µA (typical)
Hardware Write Protection: protected area
size defined by three non-volatile bits (BP0,
BP1 and BP2)
Electronic signatures
– JEDEC standard two-byte signature
(2013h)
– Unique ID code (UID) with 16 bytes read-
only, available upon customer request
– RES instruction, one-byte, signature (12h),
for backward compatibility
Packages
– RoHS compliant
Automotive grade parts available
SO8 (MN)
150 mils width
VFDFPN8 (MP)
(MLP8 6 x 5 mm)
SO8W (MW)
208 mils width
DFN8 (MS)
MLP8 6 x 5 mm
UFDFPN8 (MC)
(MLP8 4 x 3 mm)
UFDFPN8 (MB)
(MLP8 2 x 3 mm)
www.Numonyx.com
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