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MAX14850
Six-Channel Digital Isolator
6Maxim Integrated
INSULATION AND SAFETY CHARACTERISTICS
Note 2: All units are production tested at T
A
= +25°C. Specifications over temperature are guaranteed by design. All voltages of
side A are referenced to GNDA. All voltages of side B are referenced to GNDB, unless otherwise noted.
Note 3: Guaranteed by design. Not production tested.
Note 4: The undervoltage lockout threshold and hysteresis guarantee that the outputs are in a known state during a slump in the
supplies. See the Detailed Description section for more information.
Note 5: The isolation is guaranteed for t = 60s, and tested at 120% of the guaranteed value for 1s.
Note 6: DV
TOL
= V
OL
– V
IL
. This is the minimum difference between the output logic-low voltage and the input logic threshold for
the same I/O pin. This ensures that the I/O channels are not latched low when any of the I/O inputs are driven low (see the
Bidirectional Channels section).
Note 7: The common-mode transient immunity guarantees that the device will hold its outputs stable when the isolation voltage
changes at the specified rate.
Note 8: Pulse-width distortion is defined as the difference in propagation delay between low-to-high and high-to-low transitions
on the same channel. Channel-to-channel skew is defined as the difference in propagation delay between different chan-
nels on the same device. Part-to-part skew is defined as the difference in propagation delays (for unidirectional channels)
between different devices, when both devices operate with the same supply voltage, at the same temperature and have
identical package and test circuits.
PARAMETER SYMBOL CONDITIONS VALUE UNIT
IEC INSULATION AND SAFETY RELATED FOR SPECIFICATIONS FOR SOIC-16
External Tracking (Creepage) CPG IEC 60664-1
SOIC-16 4.2 mm
QSOP-16 3.81 mm
External Air Gap (Clearance) CLR IEC 60664-1
SOIC-16 4.2 mm
QSOP-16 3.81 mm
Minimum Internal Gap Insulation Thickness 0.0026 mm
Tracking Resistance
(Comparative Tracking Index)
CTI IEC 112 / VDE 030 Part 1 175 V
Insulation Resistance Across
Barrier
R
ISO
1
GI
Capacitance Across Isolation
Barrier
C
IO
f = 1MHz 12 pF
VDE IEC INSULATION CHARACTERISTICS
Surge Isolation Voltage V
IOSM
IEC 60747-17, section 5.3.1.6 and 5.4.6 for basic
insulation
1 kVpeak
Repetitive Peak Isolation Voltage V
IORM
IEC 60747-17, section 5.3.1.3 282 Vpeak
Rated Transient Isolation Voltage V
IOTM
IEC 60747-17, section 5.3.1.4 850 Vpeak
Safety Limiting Temperature T
S
IEC 60747-17, section 7.2.1 150
NC
Safety Limiting Side A Power
Dissipation
P
SA
IEC 60747-17, section 7.2.1 0.75 W
Safety Limiting Side B Power
Dissipation
P
SB
IEC 60747-17, section 7.2.1 0.75 W
Apparent Charge Method q
pd
IEC 60747-17, section 7.4, method a & b 5 pC
Overvoltage Category IEC 60664-1, single or three phase 50V DC or AC I,II
Overvoltage Category IEC 60664-1, single or three phase 100V DC or AC I
Climatic Category 40/125/21
Pollution Degree DIN VDE 0110, Table 1 2

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