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器件3D模型￥ 53.715
MAX17036GTL+ 数据手册 - Maxim Integrated（美信）
制造商:
Maxim Integrated（美信）
分类:
稳压芯片
封装:
WFQFN-40
描述:
1/2/ 3相Quick -PWM IMVP- 6.5 VID控制器 1/2/3-Phase Quick-PWM IMVP-6.5 VID Controllers
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P1P12P13P14P15P16Hot
典型应用电路图在P19
封装尺寸在P38
型号编码规则在P1
功能描述在P1
技术参数、封装参数在P9
应用领域在P1P17P37
电气规格在P3P4P5P6P7P8P9P20P21P22P23P27
导航目录
MAX17036GTL+数据手册
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MAX17030/MAX17036
1/2/3-Phase Quick-PWM
IMVP-6.5 VID Controllers
_______________________________________________________________________________________ 5
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, V
IN
= 10V, V
CC
= V
DD
= V
SHDN
= V
PGD_IN
= V
PSI
= V
ILIM
= 5V, V
DPRSLPVR
= V
GNDS
= 0, V
CSP_
= V
CSN_
=
1.0000V, FB = FBAC, R
FBAC
= 3.57kΩ from FBAC to CSN_, [D6–D0] = [0101000]; T
A
= 0°C to +85°C, unless otherwise noted.
Typical values are at T
A
= +25°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Phases 2, 3 Disable Threshold Measured at CSP2, CSP3 3
V
CC
-
1
V
CC
-
0.4
V
CSP_, CSN_ Input Current I
CSP
, I
CSN
T
A
= +25°C -0.2 +0.2 μA
ILIM Input Current I
ILIM
T
A
= +25°C -0.1 +0.1 μA
T
A
= +25°C -0.5 +0.5
Droop Amplifier Offset
(1/N) x (V
CSP_
-
V
CSN_
) at I
FBAC
= 0;
indicates
summation over all
power-up enabled
phases from 1 to N,
N = 3
T
A
= 0°C to +85°C -0.75 +0.75
mV/
phase
Droop Amplifier
Transconductance
G
m(FBAC)
I
FBAC
/[(V
CSP_
- V
CSN_
)];
indicates summation over all power-up
enabled phases from 1 to N, N = 3,
V
FBAC
= V
CSN_
= 0.45V to 1.5V
393 400 406 μS
Current-Monitor Offset
(1/N) x (V
CSP_
- V
CSN_
) at I
IMON
= 0,
indicates summation over all power-up
enabled phases from 1 to N, N = 3
-1.1 +1
mV/
phase
Current-Monitor
Transconductance
G
m(IMON)
I
IMON
/[(V
CSP_
- V
CSN_
)];
indicates summation over all power-up
enabled phases from 1 to N, N = 3,
V
CSN_
= 0.45V to 1.5V
1.552 1.6 1.648 mS
GATE DRIVERS
High state (pullup) 0.9 2.5
DH_ Gate-Driver On-Resistance R
ON(DH)
BST_ - LX_ forced
to 5V
Low state (pulldown) 0.7 2
High state (pullup) 0.7 2
DL_ Gate-Driver On-Resistance R
ON(DL)
Low state (pulldown) 0.25 0.7
DH_ Gate-Driver Source Current I
DH(SOURCE)
DH_ forced to 2.5V,
BST_ - LX_ forced to 5V
2.2 A
DH_ Gate-Driver Sink Current I
DH(SINK)
DH_ forced to 2.5V,
BST_ - LX_ forced to 5V
2.7 A
DL_ Gate-Driver Source Current I
DL(SOURCE)
DL_ forced to 2.5V 2.7 A
DL_ Gate-Driver Sink Current I
DL(SINK)
DL_ forced to 2.5V 8 A
DL_ falling, C
DL_
= 3nF 20
DL_ Transition Time
DL rising, C
DL_
= 3nF 20
ns
DH_ falling, C
DH_
= 3nF 20
DH_ Transition Time
DH_ rising, C
DH_
= 3nF 20
ns
Internal BST_ Switch
On-Resistance
R
ON(BST)
I
BST_
= 10mA 10 20
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