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MC14076BDR2G 数据手册 - ON Semiconductor（安森美）
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ON Semiconductor（安森美）
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触发器
封装:
SOIC-16
描述:
4位D触发器(三态输出)
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MC14076BDR2G数据手册
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© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 8
1 Publication Order Number:
MC14076B/D
MC14076B
4-Bit D-Type Register
with Three-State Outputs
The MC14076B 4−Bit Register consists of four D−type flip−flops
operating synchronously from a common clock. OR gated
output−disable inputs force the outputs into a high−impedance state
for use in bus organized systems. OR gated data−disable inputs cause
the Q outputs to be fed back to the D inputs of the flip−flops. Thus they
are inhibited from changing state while the clocking process remains
undisturbed. An asynchronous master root is provided to clear all four
flip−flops simultaneously independent of the clock or disable inputs.
Features
• Three−State Outputs with Gated Control Lines
• Fully Independent Clock Allows Unrestricted Operation for the
Two Modes: Parallel Load and Do Nothing
• Asynchronous Master Reset
• Four Bus Buffer Registers
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Capable of Driving Two Low−Power TTL Loads or One
Low−Power Schottky TTL Load Over the Rated Temperature
Range
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (Voltages Referenced to V
SS
)
Symbol
Parameter Value Unit
V
DD
DC Supply Voltage Range −0.5 to +18.0 V
V
in
, V
out
Input or Output Voltage Range
(DC or Transient)
−0.5 to V
DD
+ 0.5 V
I
in
, I
out
Input or Output Current
(DC or Transient) per Pin
±10 mA
P
D
Power Dissipation, per Package (Note 1) 500 mW
T
A
Ambient Temperature Range −55 to +125 °C
T
stg
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature
(8−Second Soldering)
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Temperature Derating: “D/DW” Packages: –7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be
taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, V
in
and V
out
should be constrained to the range V
SS
≤ (V
in
or V
out
) ≤ V
DD
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either V
SS
or V
DD
). Unused outputs must be left open.
http://onsemi.com
MARKING DIAGRAM
SOIC−16
D SUFFIX
CASE 751B
14076BG
AWLYWW
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G = Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
1
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