Datasheet 搜索 > JFET晶体管 > Fairchild（飞兆/仙童） > MMBFJ177 数据手册 > MMBFJ177 数据手册 2/3 页
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MMBFJ177 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
JFET晶体管
封装:
SOT-23-3
描述:
FAIRCHILD SEMICONDUCTOR MMBFJ177 晶体管, JFET, JFET, 30 V, -1.5 mA, -20 mA, 2.5 V, SOT-23, JFET
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MMBFJ177数据手册
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of 3 Go
若手册格式错乱，请下载阅览PDF原文件
MMBFJ177LT1G, SMMBFJ177LT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (V
DS
= 0, I
D
= 1.0 mAdc)
V
(BR)GSS
30 − Vdc
Gate Reverse Current (V
DS
= 0 Vdc, V
GS
= 20 Vdc) I
GSS
− 1.0 nAdc
Gate Source Cutoff Voltage (V
DS
= −15 Vdc, I
D
= −10 nAdc) V
GS(off)
0.8 2.5 Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (V
GS
= 0, V
DS
= −15 Vdc) (Note 2) I
DSS
−1.5 −20 mAdc
Drain Cutoff Current (V
DS
= −15 Vdc, V
GS
= 10 Vdc) I
D(off)
− −1.0 nAdc
Drain Source On Resistance (I
D
= −500 mAdc)
r
DS(on)
− 300
W
Input Capacitance
V
DS
= 0, V
GS
= 10 Vdc
f = 1.0 MHz
C
iss
− 11
pF
Reverse Transfer Capacitance C
rss
− 5.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%.
TYPICAL CHARACTERISTICS
Figure 1. Drain Current vs. Drain−Source
Voltage
Figure 2. Reverse Transfer Capacitance
V
DS
, DRAIN−SOURCE VOLTAGE (V) V
DS
, DRAIN−SOURCE VOLTAGE (V)
−12−10−8−6−4−20
0
−1
−2
−3
−4
−6
−7
−8
−25−20−15−10−50
0
4
6
10
12
14
Figure 3. Input Capacitance
V
DS
, DRAIN−SOURCE VOLTAGE (V)
−25−20−15−10−50
0
8
12
20
24
32
I
D
, DRAIN CURRENT (mA)
C
rss
, REVERSE TRANSFER
CAPACITANCE (pF)
C
iss
, INPUT CAPACITANCE (pF)
−5
VGS = 0 V
VGS = 0.9 V
VGS = 0.7 V
VGS = 0.5 V
VGS = 0.3 V
VGS = 0.1 V
2
8
4
16
28
V
GS
= 0 V
f = 1 MHz
V
GS
= 0 V
f = 1 MHz
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