Datasheet 搜索 > 双极性晶体管 > ON Semiconductor（安森美） > MPSA13G 数据手册 > MPSA13G 数据手册 3/6 页
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MPSA13G 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
双极性晶体管
封装:
TO-226-3
描述:
ON SEMICONDUCTOR MPSA13G 单晶体管 双极, 达林顿, NPN, 30 V, 125 MHz, 625 mW, 500 mA, 10000 hFE
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MPSA13G数据手册
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若手册格式错乱，请下载阅览PDF原文件
MPSA13, MPSA14
http://onsemi.com
3
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
R
S
, SOURCE RESISTANCE (kW)
Figure 5. Wideband Noise Figure
R
S
, SOURCE RESISTANCE (kW)
5.0
50
70
100
200
30
10
20
1.0
10
10
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
R
S
≈ 0
I
C
= 1.0 mA
100 mA
10 mA
BANDWIDTH = 1.0 Hz
I
C
= 1.0 mA
100 mA
10 mA
e
n
, NOISE VOLTAGE (nV)
i
n
, NOISE CURRENT (pA)
2.0 5.0 10 20 50 100 200 500 1000
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
= 10 mA
100 mA
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0 2.0 5.0 10 20 50 100 200 500 1000
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 mA
100 mA
I
C
= 1.0 mA
V
T
, TOTAL WIDEBAND NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
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