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NCP2809BGEVB 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
开发套件
封装:
-
描述:
ON SEMICONDUCTOR NCP2809BGEVB 评估板, NCP2809 135mW 立体声耳机放大器
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
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引脚图在P1Hot
典型应用电路图在P1P2P3P17
原理图在P2P3P17P18P20
封装尺寸在P23P24
焊盘布局在P23P24
型号编码规则在P1P22P24
标记信息在P1P22
封装信息在P22
功能描述在P4
技术参数、封装参数在P22
应用领域在P1
电气规格在P5P6
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NCP2809BGEVB数据手册
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NCP2809 Series
http://onsemi.com
6
ELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application).
The following parameters are given for the NCP2809A and NCP2809B mounted externally with 0 dB gain, unless otherwise noted.
(For typical values T
A
= 25°C, for min and max values T
A
= −40°C to 85°C, T
Jmax
= 125°C, unless otherwise noted.)
Characteristic Symbol Conditions
Min
(Note 7)
Typ
Max
(Note 7)
Unit
Positive Supply Rejection Ratio PSRR V+ R
L
= 16
V
pripple_pp
= 200 mV
C
by
= 1.0 F
Input Terminated with 10
NCP2809A
F = 217 Hz
V
p
= 5.0 V
V
p
= 2.4 V
F = 1.0 kHz
V
p
= 5.0 V
V
p
= 2.4 V
−73
−82
−73
−85
dB
Positive Supply Rejection Ratio PSRR V+ R
L
= 16
V
pripple_pp
= 200 mV
C
by
= 1.0 F
Input Terminated with 10
NCP2809B
with 0 dB External Gain
F = 217 Hz
V
p
= 5.0 V
V
p
= 2.4 V
F = 1.0 kHz
V
p
= 5.0 V
V
p
= 2.4 V
−80
−82
−81
−81
dB
Efficiency V
P
= 5.0 V, R
L
= 16 = 135 mW 63 %
Thermal Shutdown Temperature
(Note 8)
T
sd
− 160 °C
Total Harmonic Distortion + Noise
(Note 9)
THD+N V
P
= 2.4 V, f = 1.0 kHz
R
L
= 16 , P
out
= 20 mW
R
L
= 32 , P
out
= 15 mW
V
P
= 5.0 V, f = 1.0 kHz
R
L
= 16 , P
out
= 120 mW
R
L
= 32 , P
out
= 70 mW
0.006
0.004
0.005
0.003
%
7. Min/Max limits are guaranteed by production test.
8. This thermal shutdown is made with an hysteresis function. Typically, the device turns off at 160°C and turns on again when the junction
temperature is less than 140°C.
9. The outputs of the device are sensitive to a coupling capacitor to Ground. To ensure THD+N at very low level for any sort of headset
(16 or 32 , outputs (OUT_R, OUT_L, OUT_I and REF_I) must not be grounded with more than 500 pF.
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