Datasheet 搜索 > 稳压芯片 > ON Semiconductor（安森美） > NCV7805ABD2TR4G 数据手册 > NCV7805ABD2TR4G 数据手册 4/31 页
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NCV7805ABD2TR4G 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
稳压芯片
封装:
TO-263-3
描述:
NCV7800 系列 5 V 1 A 表面贴装 正电压 稳压器 - D2PAK-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
原理图在P2
封装尺寸在P29P30P31
焊盘布局在P30P31
型号编码规则在P1P23P24P25P26P27P31
标记信息在P1P28P31
封装信息在P23P24P25P26P27
应用领域在P1P21P23P24P25P26P27
电气规格在P3P4P5P6P7P8P9P10P11P12P13P14
型号编号列表在P1
导航目录
NCV7805ABD2TR4G数据手册
Page:
of 31 Go
若手册格式错乱，请下载阅览PDF原文件
MC7800, MC7800A, MC7800AE, NCV7800
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (V
in
= 10 V, I
O
= 1.0 A, T
J
= T
low
to 125°C (Note 3), unless otherwise noted)
MC7805AB/MC7805AC/NCV7805AB
Characteristic Symbol Min Typ Max Unit
Output Voltage (T
J
= 25°C) V
O
4.9 5.0 5.1 Vdc
Output Voltage (5.0 mA ≤ I
O
≤ 1.0 A, P
D
≤ 15 W)
7.5 Vdc ≤ V
in
≤ 20 Vdc
V
O
4.8 5.0 5.2
Vdc
Line Regulation (Note 4)
7.5 Vdc ≤ V
in
≤ 25 Vdc, I
O
= 500 mA
8.0 Vdc ≤ V
in
≤ 12 Vdc, I
O
= 1.0 A
8.0 Vdc ≤ V
in
≤ 12 Vdc, I
O
= 1.0 A, T
J
= 25°C
7.3 Vdc ≤ V
in
≤ 20 Vdc, I
O
= 1.0 A, T
J
= 25°C
Reg
line
−
−
−
−
0.5
0.8
1.3
4.5
10
12
4.0
10
mV
Load Regulation (Note 4)
5.0 mA ≤ I
O
≤ 1.5 A, T
J
= 25°C
5.0 mA ≤ I
O
≤ 1.0 A
250 mA ≤ I
O
≤ 750 mA
Reg
load
−
−
−
1.3
0.8
0.53
25
25
15
mV
Quiescent Current I
B
− 3.2 6.0 mA
Quiescent Current Change
8.0 Vdc ≤ V
in
≤ 25 Vdc, I
O
= 500 mA
7.5 Vdc ≤ V
in
≤ 20 Vdc, T
J
= 25°C
5.0 mA ≤ I
O
≤ 1.0 A
DI
B
−
−
−
0.3
−
0.08
0.8
0.8
0.5
mA
Ripple Rejection
8.0 Vdc ≤ V
in
≤ 18 Vdc, f = 120 Hz, I
O
= 500 mA
RR
68 83 −
dB
Dropout Voltage (I
O
= 1.0 A, T
J
= 25°C) V
I
− V
O
− 2.0 − Vdc
Output Noise Voltage (T
A
= 25°C)
10 Hz ≤ f ≤ 100 kHz
V
n
− 10 −
mV/V
O
Output Resistance (f = 1.0 kHz) r
O
− 0.9 −
mW
Short Circuit Current Limit (T
A
= 25°C)
V
in
= 35 Vdc
I
SC
− 0.2 −
A
Peak Output Current (T
J
= 25°C) I
max
− 2.2 − A
Average Temperature Coefficient of Output Voltage TCV
O
− −0.3 − mV/°C
3. T
low
=0°C for MC78XXC, MC78XXAC,
= *40°C for NCV78XX, MC78XXB, MC78XXAB, and MC78XXAEB
4. Load and line regulation are specified at constant junction temperature. Changes in V
O
due to heating effects must be taken into account
separately. Pulse testing with low duty cycle is used.
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