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NGTB25N120FL2WG 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
IGBT晶体管
封装:
TO-247-3
描述:
NGTB25N120FL2: IGBT 1200V 25A FS2 太阳能/UPS
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NGTB25N120FL2WG数据手册
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© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 1
1 Publication Order Number:
NGTB25N120FL2W/D
NGTB25N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
Features
• Extremely Efficient Trench with Field Stop Technology
• T
Jmax
= 175°C
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 10 ms Short Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage V
CES
1200 V
Collector current
@ T
C = 25°C
@ TC = 100°C
I
C
50
25
A
Pulsed collector current, T
pulse
limited by T
Jmax
I
CM
100 A
Diode forward current
@ T
C = 25°C
@ TC = 100°C
I
F
50
25
A
Diode pulsed current, T
pulse
limited
by T
Jmax
I
FM
100 A
Gate−emitter voltage
Transient gate−emitter voltage
(T
pulse
= 5 ms, D < 0.10)
V
GE
$20
±30
V
Power Dissipation
@ T
C = 25°C
@ TC = 100°C
P
D
385
192
W
Short Circuit Withstand Time
V
GE
= 15 V, V
CE
= 500 V, T
J
≤ 150°C
T
SC
10
ms
Operating junction temperature
range
T
J
−55 to +175 °C
Storage temperature range T
stg
−55 to +175 °C
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−247
CASE 340AL
C
G
25 A, 1200 V
V
CEsat
= 2.0 V
E
off
= 0.60 mJ
E
Device Package Shipping
ORDERING INFORMATION
NGTB25N120FL2WG TO−247
(Pb−Free)
30 Units / Ra
il
www.onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
25N120FL2
AYWWG
G
E
C
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