Datasheet 搜索 > IGBT晶体管 > ON Semiconductor（安森美） > NGTB25N120FL2WG 数据手册 > NGTB25N120FL2WG 数据手册 5/10 页
￥ 31.702
NGTB25N120FL2WG 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
IGBT晶体管
封装:
TO-247-3
描述:
NGTB25N120FL2: IGBT 1200V 25A FS2 太阳能/UPS
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
NGTB25N120FL2WG数据手册
Page:
of 10 Go
若手册格式错乱，请下载阅览PDF原文件
NGTB25N120FL2WG
www.onsemi.com
5
TYPICAL CHARACTERISTICS
t
d(off)
Figure 13. Switching Loss vs. Rg
Rg, GATE RESISTOR (W)
453525155
SWITCHING LOSS (mJ)
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 25 A
55 65 75 85
Figure 14. Switching Time vs. Rg
Rg, GATE RESISTOR (W)
453525155
SWITCHING TIME (ns)
1000
55 65 75 85
Figure 15. Switching Loss vs. V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
550500450400350
SWITCHING LOSS (mJ)
800600
V
GE
= 15 V
T
J
= 150°C
I
C
= 25 A
Rg = 10 W
Figure 16. Switching Time vs. V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING TIME (ns)
1000
Figure 17. Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
1000100101
0.1
1
10
100
1000
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
Figure 18. Reverse Bias Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
1
10
100
1000
V
GE
= 15 V, T
C
= 125°C
1000100101
t
f
t
d(off)
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 25 A
10
V
GE
= 15 V
T
J
= 150°C
I
C
= 25 A
Rg = 10 W
10
6
5
4
3
2
1
0
2
1
0
550500450400350 800600
10k
10k
650 700 750
4
3
650 700 750
100
t
d(on)
t
r
t
f
t
d(on)
t
r
100
E
ON
E
OFF
E
ON
E
OFF
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
