NTHS2101PT1G 数据手册 - ON Semiconductor（安森美）

●最大源漏极电压VdsDrain-Source Voltage| -8V \---|--- 最大栅源极电压Vgs(±)Gate-Source Voltage| 8V 最大漏极电流IdDrain Current| -5.4A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.019Ω @-5.4A,-4.5V 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.45--1.5V 耗散功率PdPower Dissipation| 1.3W Description & Applications| Features • Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics • Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the Operating Voltage used in many Logic ICs in Portable Electronics • Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not Required • Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology • Pb−Free Package is Available 描述与应用| •薄型（<1.1毫米）允许它能够轻松融入极薄 环境，如便携式电子产品 •专为提供低RDS（ON） 低栅极电压为1.8 V， 用于便携式电子产品在许多逻辑IC的工作电压 •简化电路设计，因为其他的门电路升压 电压不 •工作在标准逻辑电平栅极驱动，有利于未来 迁移到下级使用相同的基本拓扑结构 •无铅包装是可用