Datasheet 搜索 > TVS二极管 > Taiwan Semiconductor（台湾半导体） > P6KE170A 数据手册 > P6KE170A 数据手册 1/7 页
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P6KE170A 数据手册 - Taiwan Semiconductor（台湾半导体）
制造商:
Taiwan Semiconductor（台湾半导体）
分类:
TVS二极管
封装:
DO-15
描述:
ESD抑制器/TVS二晶體 600W 170.5V 5% Unidi rectional TVS
Pictures:
3D模型
符号图
焊盘图
引脚图
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页面导航:
封装尺寸在P6
技术参数、封装参数在P1P2P3P7
应用领域在P1
电气规格在P1P2P3
导航目录
P6KE170A数据手册
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若手册格式错乱，请下载阅览PDF原文件
P6KE6V8(C)A – P6KE440(C)A
Taiwan Semiconductor
1
Version: B1910
600W Transient Voltage Suppressors
FEATURES
● Glass passivated junction
● 600W peak pulse power capability at 1.0ms
● Excellent clamping capability
● Low incremental surge resistance
● Fast response time: Typically
< 1.0ps from 0 V to BV for uni-directional,
5.0 ns for bidirectional
● Typical I
R
: 1.0μA above 10V
APPLICATIONS
● Devices for bipolar applications
● Bi-directional types use CA suffix
● Electrical characteristics apply in both directions
DO-15
COLOR BAND DENOTES CATHODE
ON UNIDIRECTIONAL DEVICES ONLY. NO
COLOR BAND ON BIDIRECTIONAL DEVICES.
ABSOLUTE MAXIMUM RATINGS
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation t
p
=1ms
P
PPM
600 W
Peak pulse current I
PPM
see table A
Power dissipation
.375 inch lead length at T
A
=75°C
P
D
5.0 W
Non-Repetitive Peak Forward Surge Current
Superimposed on Rated Load (JEDEC Method)
(1)
I
FSM
100 A
Junction temperature
T
J
-65 to +175 °C
Storage temperature
T
STG
-65 to +175 °C
Note:
1. Measured on 8.3ms single half-sine wave; duty cycle = 4 pulses per minute maximum.
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