PESD5V0L4UG 数据手册 - NXP（恩智浦）

●极性Polarization| 单向 Unidirectional \---|--- 反向关断电压/工作电压VRWMReverse Standoff Voltage| 5V 反向击穿电压VBRBreakdown Voltage| 6.46V 峰值脉冲耗散功率PPPMPeak Pulse Power Dissipation| 30W 峰值脉冲电流IPPmPeak Forward Surge Current| 2.5A 额定耗散功率PdPower dissipation| Description & Applications| Features •Low capacitance unidirectional quadruple ESD protection diode arrays •ESD protection of up to four lines •Ultra low leakage current: IRM = 5 nA •Low diode capacitance •ESD protection up to 20 kV •Max. peak pulse power: Ppp = 30 W •IEC 61000-4-2; level 4 (ESD) •Low clamping voltage: Vcl= 12 V •IEC 61000-4-5 (surge); Ipp = 2.5 A 描述与应用| 特性 •单向四低电容ESD保护二极管阵列 •多达四线ESD保护 •超低漏电流：IRM= 5 nA •低电容二极管 •高达20 kVESD保护 •最大峰值脉冲功率：Ppp=30 W •IEC61000-4-2第4级（ESD） •低钳位电压：VCL= 12 V •IEC61000-4-5（浪涌），Ipp=2.5 A