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PMMT491A 数据手册 - NXP（恩智浦）
制造商:
NXP（恩智浦）
分类:
双极性晶体管
封装:
SOT-23
描述:
NXP PMMT491A 单晶体管 双极, NPN, 40 V, 250 mW, 1 A, 300 hFE
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PMMT491A数据手册
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若手册格式错乱，请下载阅览PDF原文件
2004 Jan 13 3
NXP Semiconductors Product data sheet
NPN BISS transistor PMMT491A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 30 V − 100 nA
I
CEO
collector cut-off current I
B
= 0; V
CE
= 30 V − 100 nA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 5 V − 100 nA
h
FE
DC current gain V
CE
= 5 V; note 1
I
C
= 1 mA 300 −
I
C
= 500 mA 300 900
I
C
= 1 A 200 −
V
CEsat
collector-emitter saturation voltage note 1
I
C
= 100 mA; I
B
= 1 mA − 200 mV
I
C
= 500 mA; I
B
= 50 mA − 300 mV
I
C
= 1 A; I
B
= 100 mA − 500 mV
V
BEsat
base-emitter saturation voltage I
C
= 1 A; I
B
= 100 mA; note 1 − 1.2 V
V
BE
base-emitter voltage V
CE
= 5 V; I
C
= 1 A; note 1 − 1.1 V
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz − 10 pF
f
T
transition frequency I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz 150 − MHz
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