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PSMN057-200B 数据手册 - Philips（飞利浦）
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PSMN057-200B数据手册
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Philips Semiconductors Product specification
N-channel TrenchMOS transistor PSMN057-200B
FEATURES SYMBOL QUICK REFERENCE DATA
• ’Trench’ technology
• Very low on-state resistance V
DSS
= 200 V
• Fast switching
• Low thermal resistance
I
D
= 39 A
R
DS(ON)
≤ 57 mΩ
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PSMN057-200B is supplied in the SOT404 (D
2
PAK) surface mounted package.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain
(no connection possible)
3 source
mb drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
Drain-source voltage T
j
= 25 ˚C to 175˚C - 200 V
V
DGR
Drain-gate voltage T
j
= 25 ˚C to 175˚C; R
GS
= 20 kΩ - 200 V
V
GS
Gate-source voltage - ± 20 V
I
D
Continuous drain current T
mb
= 25 ˚C - 39 A
T
mb
= 100 ˚C - 27.5 A
I
DM
Pulsed drain current T
mb
= 25 ˚C - 156 A
P
D
Total power dissipation T
mb
= 25 ˚C - 250 W
T
j
, T
stg
Operating junction and - 55 175 ˚C
storage temperature
d
g
s
d
g
s
13
mb
2
December 2000 1 Rev 1.000
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