Datasheet 搜索 > MOS管 > NXP（恩智浦） > PSMN057-200B,118 数据手册 > PSMN057-200B,118 数据手册 1/12 页
￥ 6.755
PSMN057-200B,118 数据手册 - NXP（恩智浦）
制造商:
NXP（恩智浦）
分类:
MOS管
封装:
TO-263-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
PSMN057-200B,118数据手册
Page:
of 12 Go
若手册格式错乱，请下载阅览PDF原文件
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC converters Switched-mode power supplies
1.4 Quick reference data
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 14 December 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175°C --200V
I
D
drain current T
mb
=25°C --39A
P
tot
total power
dissipation
--250W
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=10V; I
D
=17A; T
j
= 25 °C - 41 57 mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=39A;
V
DS
=160V; T
j
=25°C
- 3750nC
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
