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RFD3055LESM 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
TO-252-3
描述:
11A ， 60V ， 0.107欧姆，逻辑电平， N沟道功率MOSFET 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
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RFD3055LESM数据手册
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若手册格式错乱，请下载阅览PDF原文件
©2002 Fairchild Semiconductor Corporation
RFD3055LE, RFD3055LESM Rev. C0
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
RFD3055LE, RFD3055LESM
Typical Performance Curves Unless Otherwise Specified (Continued)
10
100
0.001 0.01 0.1 1 10
1
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R ≠ 0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 150
o
C
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 5V
V
GS
= 10V
V
GS
= 4V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3
6
9
12
15
01234
0
V
GS
= 3.5V
T
C
= 25
o
C
3
6
9
12
15
2345
0
I
D,
DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
90
120
150
246 810
60
I
D
= 3A
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
I
D
= 11A
I
D
= 5A
50
100
150
0 1020304050
0
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
V
GS
= 4.5V, V
DD
= 30V, I
D
= 8A
t
r
t
f
t
d(ON)
t
d(OFF)
1.0
1.5
2.0
2.5
-80 -40 0 40 80 120 160 200
0.5
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESISTANCE
V
GS
= 10V, I
D
= 11A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
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