Datasheet 搜索 > MOS管 > International Rectifier（国际整流器） > SI4420DYPBF 数据手册 > SI4420DYPBF 数据手册 1/8 页
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SI4420DYPBF 数据手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
SOIC-8
描述:
INTERNATIONAL RECTIFIER SI4420DYPBF 晶体管, MOSFET, N沟道, 30V, 12.5A, SOIC
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SI4420DYPBF数据手册
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Parameter Max. Units
V
DS
Drain- Source Voltage 30 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V ±12.5
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V ±10 A
I
DM
Pulsed Drain Current ±50
P
D
@T
A
= 25°C Power Dissipation 2.5
P
D
@T
A
= 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
E
AS
Single Pulse Avalanche Energy 400 mJ
V
GS
Gate-to-Source Voltage ± 20 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
l N-Channel MOSFET
l Low On-Resistance
l Low Gate Charge
l Surface Mount
l Logic Level Drive
l Lead-Free
8/11/04
Si4420DYPbF
HEXFET
®
Power MOSFET
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
Thermal Resistance
This N-channel HEXFET
®
power MOSFET is produced
using International Rectifier's advanced HEXFET power
MOSFET technology. The low on-resistance and low gate
charge inherent to this technology make this device ideal
for low voltage or battery driven power conversion
applications
The SO-8 package with copper leadframe offers enhanced
thermal characteristics that allow power dissipation of
greater that 800mW in typical board mount applications.
V
DSS
= 30V
R
DS(on)
= 0.009Ω
Description
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
Absolute Maximum Ratings
W
www.irf.com 1
PD - 95729
SO-8
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