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SI4421DY-T1-E3
器件3D模型
8.394
导航目录
  • 封装尺寸在P6P7
  • 型号编码规则在P1
  • 功能描述在P1P9
  • 技术参数、封装参数在P1P2P9
  • 应用领域在P1
SI4421DY-T1-E3数据手册
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Document Number: 72114
S-82282-Rev. C, 22-Sep-08
www.vishay.com
5
Vishay Siliconix
Si4421DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72114.
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
1 1010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance

SI4421DY-T1-E3 数据手册

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SI4421DYT1 数据手册

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VISHAY(威世)
SI4421DY-T1-E3 编带
VISHAY(威世)
晶体管, MOSFET, 沟槽式FET, P沟道, -10 A, -20 V, 0.007 ohm, -4.5 V, -800 mV
Vishay Semiconductor(威世)
VISHAY  SI4421DY-T1-GE3  晶体管, MOSFET, 沟槽式FET, P沟道, -10 A, -20 V, 0.007 ohm, -4.5 V, -800 mV 新
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