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SI4421DY-T1-E3 数据手册 - VISHAY（威世）
制造商:
VISHAY（威世）
分类:
MOS管
封装:
SOIC-8
描述:
SI4421DY-T1-E3 编带
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
SI4421DY-T1-E3数据手册
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Vishay Siliconix
Si4421DY
Document Number: 72114
S-82282-Rev. C, 22-Sep-08
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free Option Available
• TrenchFET
®
Power MOSFET
APPLICATIONS
• Game Station
- Load Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 20
0.00875 at V
GS
= - 4.5 V
- 14
0.01075 at V
GS
= - 2.5 V
- 12
0.0135 at V
GS
= - 1.8 V
- 11
S
S
D
D
D
S
G
D
SO-8
5
6
7
8
T op V i e w
2
3
4
1
Ordering Information:
Si4421DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Si4421DY-T1-E3 (Lead (Pb)-free)
S
G
D
P-Channel MOSFE
T
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage V
DS
- 20
V
Gate-Source Voltage V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 14 - 10
A
T
A
= 70 °C - 11.5 - 8
Pulsed Drain Current I
DM
- 40
Continuous Source Current (Diode Conduction)
a
I
S
- 2.7 - 1.36
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
3.0 1.5
W
T
A
= 70 °C 1.9 0.95
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
33 42
°C/W
Steady State 70 85
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
16 21
RoHS
COMPLIANT
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