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SM6T36A-E3/52数据手册
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SM6T Series
www.vishay.com
Vishay General Semiconductor
Revision: 14-Jul-17
3
Document Number: 88385
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 3 - Pulse Waveform
Fig. 4 - Typical Junction Capacitance
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
0.1
1
10
100
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
P
PPM
- Peak Pulse Power (kW)
t
d
- Pulse Width (s)
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
0 255075100
100
75
50
25
0
125 150 175 200
T
J
- Initial Temperature (°C)
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
0
50
100
150
t
d
0
1.0
2.0
3.0 4.0
I
PPM
- Peak Pulse Current, % I
RSM
t - Time (ms)
t
r
= 10 µs
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
10/1000 µs Waveform
as defined by R.E.A.
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
100
1000
6000
101 100 200
Uni-Directional
Bi-Directional
C
J
- Junction Capacitance (pF)
V
WM
- Reverse Stand-Off Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Measured at
Zero Bias
V
R
, Measured at
Stand-Off
Voltage V
WM
0.1
1.0
10
100
0.001 0.01 0.1 10 1 100 1000
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
10
200
100
101
100
8.3 ms Single Half Sine-Wave
Uni-Directional Only
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)

SM6T36A-E3/52 数据手册

Vishay Semiconductor(威世)
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Vishay Semiconductor(威世)
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