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SM6T36CA-E3/55
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SM6T36CA-E3/55数据手册
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SM6T Series
www.vishay.com
Vishay General Semiconductor
Revision: 14-Jul-17
2
Document Number: 88385
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
For bi-directional devices add suffix “CA”
(2)
V
BR
measured after I
T
applied for 300 μs square wave pulse
(3)
For bi-polar devices with V
RM
= 10 V or under, the I
RM
limit is doubled
Note
(1)
Mounted on minimum recommended pad layout
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
TYPE
(1)
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V
BR
AT I
T
(2)
(V)
TEST
CURRENT
I
T
(mA)
STAND-OFF
VOLTAGE
V
RM
(V)
LEAKAGE
CURRENT
I
RM
AT V
RM
(μA)
CLAMPING
VOLTAGE
V
C
AT I
PPM
10/1000 μs
CLAMPING
VOLTAGE
V
C
AT I
PPM
8/20 μs
α
T
MAX.
10
-4
/°C
UNI BI MIN. MAX. (V) (A) (V) (A)
SM6T6V8A KE7 KE7 6.45 7.14 10 5.80 1000 10.5 57.0 13.4 298 5.7
SM6T7V5A KK7 AK7 7.13 7.88 10 6.40 500 11.3 53.0 14.5 276 6.1
SM6T10A KT7 AT7 9.50 10.5 1.0 8.55 10.0 14.5 41.0 18.6 215 7.3
SM6T12A KX7 AX7 11.4 12.6 1.0 10.2 5.0 16.7 36.0 21.7 184 7.8
SM6T15A LG7 LG7 14.3 15.8 1.0 12.8 1.0 21.2 28.0 27.2 147 8.4
SM6T18A LM7 BM7 17.1 18.9 1.0 15.3 1.0 25.2 24.0 32.5 123 8.8
SM6T22A LT7 BT7 20.9 23.1 1.0 18.8 1.0 30.6 20.0 39.3 102 9.2
SM6T24A LV7 LV7 22.8 25.2 1.0 20.5 1.0 33.2 18.0 42.8 93 9.4
SM6T27A LX7 BX7 25.7 28.4 1.0 23.1 1.0 37.5 16.0 48.3 83 9.6
SM6T30A ME7 CE7 28.5 31.5 1.0 25.6 1.0 41.5 14.5 53.5 75 9.7
SM6T33A MG7 MG7 31.4 34.7 1.0 28.2 1.0 45.7 13.1 59 68 9.8
SM6T36A MK7 CK7 34.2 37.8 1.0 30.8 1.0 49.9 12.0 64.3 62 9.9
SM6T39A MM7 CM7 37.1 41.0 1.0 33.3 1.0 53.9 11.1 69.7 57 10.0
SM6T68A NG7 NG7 64.6 71.4 1.0 58.1 1.0 92.0 6.50 121 33 10.4
SM6T100A NV7 NV7 95.0 105 1.0 85.5 1.0 137 4.40 178 22.5 10.6
SM6T150A PK7 PK7 143 158 1.0 128 1.0 207 2.90 265 15 10.8
SM6T200A PR7 PR7 190 210 1.0 171 1.0 274 2.20 353 11.3 10.8
SM6T220A PR8 PR8 209 231 1.0 188 1.0 328 2.00 388 10.3 10.8
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to ambient air
(1)
R
θJA
100
°C/ W
Typical thermal resistance, junction to lead R
θJL
20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SM6T10A-E3/52 0.096 52 750 7" diameter plastic tape and reel
SM6T10A-E3/5B 0.096 5B 3200 13" diameter plastic tape and reel
SM6T10AHE3/52
(1)
0.096 52 750 7" diameter plastic tape and reel
SM6T10AHE3/5B
(1)
0.096 5B 3200 13" diameter plastic tape and reel
SM6T10A-M3/52 0.096 52 750 7" diameter plastic tape and reel
SM6T10A-M3/5B 0.096 5B 3200 13" diameter plastic tape and reel
SM6T10AHM3/H
(1)
0.096 H 750 7" diameter plastic tape and reel
SM6T10AHM3/I
(1)
0.096 I 3200 13" diameter plastic tape and reel

SM6T36CA-E3/55 数据手册

Vishay Semiconductor(威世)
6 页 / 0.12 MByte

SM6T36 数据手册

ST Microelectronics(意法半导体)
STMICROELECTRONICS  SM6T36A  TVS二极管, TVS, Transil SM6T系列, 单向, 30.8 V, 64.3 V, DO-214AA, 2 引脚
ST Microelectronics(意法半导体)
STMICROELECTRONICS  SM6T36CA  TVS二极管, TVS, Transil SM6T系列, 双向, 30.8 V, 64.3 V, DO-214AA, 2 引脚
ST Microelectronics(意法半导体)
STMICROELECTRONICS  SM6T36CAY  TVS二极管, AEC-Q331, Transil SM6T系列, 双向, 30.8 V, 64.3 V, DO-214AA, 2 引脚
ST Microelectronics(意法半导体)
STMICROELECTRONICS  SM6T36AY  TVS二极管, AEC-Q330, Transil SM6T系列, 单向, 30.8 V, 64.3 V, DO-214AA, 2 引脚
VISHAY(威世)
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌### 瞬态电压抑制器,Vishay Semiconductor
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TRANSZORB® 瞬态电压抑制器表面安装单向 600W,SM6T 系列,Vishay Semiconductor### 瞬态电压抑制器,Vishay Semiconductor
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Vishay Semiconductor(威世)
VISHAY  SM6T36A-E3/52  TVS二极管, TVS, Transil SM6T系列, 单向, 30.8 V, 64.3 V, SMD, 2 引脚
Vishay Semiconductor(威世)
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
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ESD 抑制器/TVS 二极管 600W 36V 5% Bi
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