SMAJ33A-TR 数据手册 - ST Microelectronics（意法半导体）

●极性Polarization| 单向 Unidirectional \---|--- 反向关断电压/工作电压VRWMReverse Standoff Voltage| 33V 反向击穿电压VBRBreakdown Voltage| 38.6V 峰值脉冲耗散功率PPPMPeak Pulse Power Dissipation| 400W 峰值脉冲电流IPPmPeak Forward Surge Current| 7.5A 额定耗散功率PdPower dissipation| Description & Applications| FEATURES • Surface Mount Transient Voltage Suppressors • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % (300 W above 78 V) • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC 描述与应用| 特点 •表面贴装瞬态电压抑制器•薄型包装 •适合自动放置 •玻璃钝化结 •可提供单向和双向 •400瓦峰值脉冲功率能力与a10/1000微秒波形，重复频率（工作周期）：0.01％（高于78 V300 W） •出色的钳位能力 •非常快的响应时间 •低增量浪涌电阻 •会见MSL每1，J-STD-020，LF最大峰值为260°C •浸焊260°C，40秒 •组件按照RoHS 2002/95/EC