Datasheet 搜索 > 肖特基二极管 > VISHAY（威世） > SS10PH10-M3/86A 数据手册 > SS10PH10-M3/86A 数据手册 1/5 页
￥ 1.438
SS10PH10-M3/86A 数据手册 - VISHAY（威世）
制造商:
VISHAY（威世）
分类:
肖特基二极管
封装:
TO-277
描述:
高电流密度表面贴装高压肖特基整流器 High Current Density Surface Mount High-Voltage Schottky Rectifier
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
SS10PH10-M3/86A数据手册
Page:
of 5 Go
若手册格式错乱，请下载阅览PDF原文件
SS10PH9 & SS10PH10
Vishay General Semiconductor
Document Number: 89000
Revision: 21-Apr-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
High Current Density Surface Mount
High Voltage Schottky Rectifier
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Guardring for overvoltage protection
• High barrier technology, T
J
= 175 °C
maximum
• Low leakage current
• Meets MSL level 1, per J-STD-020
• Solder dip 265 °C max. 10 s, per JESD 22-A111
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Base P/NHM3 - halogen-free and RoHS compliant,
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3
suffix meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
RRM
90 V, 100 V
I
FSM
200 A
E
AS
20 mJ
V
F
at I
F
= 10 A
0.661 V
I
R
0.3 µA
T
J
max.
175 °C
K
2
1
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
eSMP
TM
Series
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS10PH9 SS10PH10 UNIT
Device marking code 10H9 10H10
Maximum repetitive peak reverse voltage V
RRM
90 100 V
Maximum average forward rectified current (Fig. 1) I
F(AV)
10 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
200 A
Non-repetitive avalanche energy at I
AS
= 2 A, L = 10 mH, T
J
= 25 °C E
AS
20 mJ
Operating junction and storage temperature range T
J,
T
STG
- 55 to + 175 °C
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
