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SS10PH10-M3/86A 数据手册 - Vishay Semiconductor(威世)
制造商:
Vishay Semiconductor(威世)
分类:
肖特基二极管
封装:
TO-277-3
描述:
VISHAY SS10PH10-M3/86A 肖特基整流器, 单, 100 V, 10 A, TO-277A, 3 引脚, 880 mV
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SS10PH10-M3/86A数据手册
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SS10PH9, SS10PH10
www.vishay.com
Vishay General Semiconductor
Revision: 23-Dec-14
1
Document Number: 89000
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
High Voltage Schottky Rectifiers
FEATURES
• Power pack
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Guardring for overvoltage protection
• High barrier technology, T
J
= 175 °C maximum
• Low leakage current
• Meets MSL level 1, per J-STD-020
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
RRM
90 V, 100 V
I
FSM
200 A
E
AS
20 mJ
V
F
at I
F
= 10 A 0.661 V
I
R
0.3 μA
T
J
max. 175 °C
Package TO-277A (SMPC)
Diode variations Single die
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
K
2
1
eSMP
®
Series
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS10PH9 SS10PH10 UNIT
Device marking code 10H9 10H10
Maximum repetitive peak reverse voltage V
RRM
90 100 V
Maximum average forward rectified current (fig. 1) I
F(AV)
10 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
200 A
Non-repetitive avalanche energy
at I
AS
= 2.0 A, T
J
= 25 °C
E
AS
20 mJ
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
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