SSM6J21TU 数据手册 - Toshiba（东芝）

●最大源漏极电压VdsDrain-Source Voltage| -12V \---|--- 最大栅源极电压Vgs(±)Gate-Source Voltage| 12V 最大漏极电流IdDrain Current| -3A 源漏极导通电阻RdsDrain-Source On-State Resistance| 88mΩ@ VGS = -2.5V, ID = -1.5A 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.5~-1.1V 耗散功率PdPower Dissipation| 500mW/0.5W Description & Applications| TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) High Current Switching Applications • Suitable for high-density mounting due to compact package • Low on resistance:Ron = 88 mΩ (max) (@VGS = -2.5 V) 描述与应用| 东芝场效应晶体管硅P沟道MOS类型（U-MOSⅢ） 高电流开关应用 •适用于高密度安装由于紧凑的封装 •低导通电阻:Ron = 88 mΩ (max) (@VGS = -2.5 V)