Datasheet 搜索 > ST Microelectronics（意法半导体） > ST13007NFP 数据手册 > ST13007NFP 数据手册 2/7 页
￥ 0
ST13007NFP 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
封装:
TO-220
描述:
高压快速开关NPN功率晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
原理图在P1
技术参数、封装参数在P1
应用领域在P1
电气规格在P2
导航目录
ST13007NFP数据手册
Page:
of 7 Go
若手册格式错乱，请下载阅览PDF原文件
THERMAL DATA
TO-220 TO-220FP
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-Ambient Max
1.56
62.5
3.8
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
=25
o
C unlessotherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
Collector Cut-off
Current (V
BE
=-1.5V)
V
CE
=ratedV
CEV
V
CE
=ratedV
CEV
T
c
=100
o
C
1
5
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
=0)
V
EB
=9V 1 mA
V
CEO(sus)
∗ Collector-Emitter
Sustaining Voltage
I
C
= 10 mA 400 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
I
C
=2A I
B
=0.4A
I
C
=5A I
B
=1A
I
C
=8A I
B
=2A
I
C
=5A I
B
=1A T
c
=100
o
C
1
2
3
3
V
V
V
V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
I
C
=2A I
B
=0.4A
I
C
=5A I
B
=1A
I
C
=5A I
B
=1A T
c
=100
o
C
1.2
1.6
1.5
V
V
V
h
FE
∗ DC Current Gain I
C
=2A V
CE
=5V
Group A
Group B
I
C
=5A V
CE
=5V
15
26
5
28
40
30
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 5 A V
CL
=200V
I
B1
=1A V
BEoff
=-5V
R
BB
=0Ω
0.6
60
1.5
110
µs
ns
* Pulsed: Pulse duration = 300 µs, duty cycle 2 %
Note : Product is pre-selected inDC current gain (GROUP A and GROUP B).STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
ST13007N / ST13007NFP
2/7
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
